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Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR in Saudi Arabia

Gump's grocery 5PCS IC IR2110S IR2110 Driver HIGH/Low Side 16-SOIC IR

SAR 47

Weight
13 g
All electronics ship with US style plugs. You may need a voltage converter or a plug adapter.
1 +

Special Features

  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout for both channels
  • 3.3V logic compatible separate logic supply range from 3.3V to 20VLogic and power ground ±5V offset
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic

Description

Features
Floating channel designed for bootstrap operation, fully operational to +500V or +600VTolerant to negative transient voltagedV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible separate logic supply range from 3.3V to 20VLogic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs

Description:
The IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enableruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The outputdrivers feature a high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 500 or 600 volts

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