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2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia 2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia 2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia 2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia 2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia 2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects in Saudi Arabia

2SA1943 2SC5200 Transistor Assortment (5 Pairs, 10 Pcs) High Power Audio Silicon BJT Transistors for Amplifier and DIY Audio Projects

SAR 45

Brand
Shutao
Weight
10 g
1 +

Special Features

  • Contains 5 Pairs (10 total) of Matched 2SA1943 & 2SC5200 Transistors for complementary audio amplifier circuits
  • High power BJT ensures robust performance and easy heat sinking for demanding applications
  • Wide application range from signal amplification to switch control in audio equipment, power supplies, and regulators
  • Precise model selection offers 5 pieces each of PNP (2SA1943) and NNP (2SC5200) types for project flexibility
  • 2SA1943 2SC5200 transistor assortment Collector-base voltage:230 V, collector current:15 A

Description

2SA1943 is a high-frequency power transistor with a characteristic frequency of 30MHz.
The collector-emitter breakdown voltage of this device reaches 250V, the maximum collector current is 17A, and it supports 150W power consumption.

Limit parameters: collector-emitter breakdown voltage 230V
Collector continuous current 15A
Maximum power dissipation 150W
Frequency characteristics: Characteristic frequency (fT) 30MHz
Electrical performance: VCE saturation voltage drop 3V

Under different test conditions, 2SC5200 showed very good stability.
When the test conditions VCE = 5 V, IC = 1 A, the transition frequency is 30 MHz
When the test conditions VCB=10 V, IE=0, the transition frequency is 1MHz and the maximum electrode output capacitance reaches 200 pF
When the test conditions VCE=5 V, IC = 7 A, the maximum base-emitter voltage reaches 1.5V
When the test conditions IC=8 A, IB=0.8 A, the collector-emitter saturation voltage is 3.0 V

Minimum DC current gain (hFE): 80 @ 1A, 5V
Vce saturation (maximum) under Ib, Ic conditions: 3V @ 800mA, 8A
Conversion frequency: 30MHz
Voltage - Collector-Emitter Breakdown (Max): 230V
Collector current: 15A
Power characteristics: medium power
Frequency characteristics: intermediate frequency
Polarity: NPN type
Structure: point contact type

Package include:
5 x 2SA1943 transistor
5 x 2SC5200 transistor

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