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5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive in Saudi Arabia 5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive in Saudi Arabia 5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive in Saudi Arabia 5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive in Saudi Arabia 5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive in Saudi Arabia

5PCS IRLZ44N Field Effect Transistor N Channel Logic Level MOS Tube 55V 47A TO-220 Through Hole for Power Conversion and Motor Drive

SAR 35
– 1 +

Special Features

  • Product model: IRLZ44N field effect transistor (FET) N channel logic level MOSFET 55V 47A TO-220 through hole
  • Product material: The semiconductor material is silicon, the oxide in the MOS tube is silicon dioxide, and the packaging material is plastic.
  • Product dimensions: Length 28.8mm/1.13in, width 10.0mm/0.39in, height 4.5mm/0.18in
  • Product advantages: Extremely low switching conduction loss, effectively improving circuit efficiency. High voltage resistance and fast switching speed. Logic level gate drive, no additional drive circuit required, simplifying circuit design. Good thermal stability and wide safe operating area.
  • Product applications: Widely used in power conversion, motor drive, and other fields. For example, DC-DC converters can be used for boost or buck converters. In electric vehicles and other portable devices, they can serve as protective and control switches. In high-power lighting applications, they can function as switch components to regulate and control the current of lights, etc.

Description

1. Features
Low on-resistance: The switch has extremely low on-resistance, effectively improving circuit efficiency and reducing energy loss in the device. It is suitable for power conversion circuits with high efficiency requirements.
High current capability: It can meet the requirements of high-current loads and is commonly used in circuits that require high-current processing, such as motor drives and power amplifiers.
High voltage withstand capability: With a maximum drain-source voltage of 55V, it can withstand certain voltage surges, making it suitable for medium-voltage conversion and switching circuits, and capable of stable operation in various voltage environments.
Fast switching speed: Utilizing advanced process technology, it features fast switching characteristics, enabling rapid conduction and cutoff in high-frequency circuits. It is suitable for high-frequency switching power supplies, PWM control circuits, and other applications, enhancing system operating frequency and performance.
Wide safe operating area: Features a robust polysilicon gate unit structure and complex planar unit structure, maintaining a wide safe operating area. It can operate stably under various electrical stress conditions, reducing the risk of device damage due to overcurrent or overvoltage during use.

2. Specifications
Product model: IRLZ44N field-effect transistor (FET) N-channel logic-level MOSFET 55V 47A TO-220 through-hole
Product dimensions: Length 28.8mm/1.13in, width 10.0mm/0.39in, height 4.5mm/0.18in

3. Package contents
5pcs IRLZ44N MOSFETs

4. Notes
This device generates heat during high-current operation. In high-power applications, appropriate heat dissipation measures must be taken, such as installing a heat sink or ensuring adequate ventilation, to maintain the device operating temperature within the recommended range.

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