High Repetitive Peak Current Capability for Reliable Operation.
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
Fast Switching Speed
100% avalanche tested,Enhancement mode.
Description
This MOSFET utilizes the latest processing techniques to achievelow on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°Coperating junction temperature and high repetitive peak current capability.
These features combine tomake this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Transistor polarity: N-Channel
RDS (Conduction) : 0.014 Ohms
Installation style: Through Hole
Gate/source breakdown voltage: 25 V
Package include:
5Pcs *IRFB4227