Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design and low on-resistance
Dynamic dV/dt Rating, Fast Switching
Repetitive Avalanche Rated, 175 °C Operating Temperature
Ease of Paralleling, Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Description
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.