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12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia 12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia 12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia 12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia 12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia 12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip in Saudi Arabia

12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V Power Mosfets Transistor 3Pin MOS Field Effect Tube Chip

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Special Features

  • MOSFET N-CH current Rated: 30A; Voltage Rated: 200V; Pin: 3-Pin(3+Tab)
  • Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A, the high current and voltage ratings provide flexibility across various applications.
  • IRFP250 IRFP250N MOSFET transistors meet the needs of electronic circuits, fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications
  • MOSFET IRFP250N TO-247AC N-Channel 200V 30A widely Application: IRFP250 IRFP250N MOSFET Transistors is widely used in various electronic components
  • The IRFP250N MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

Description

Rated voltage (DC): 200 V
Rated current: 30.0 A
Drain-source resistance: 75.0 mΩ
Polarity: N-Channel
Power dissipated: 214 W
Product Series: IRFP250N
Drain-source voltage (Vds): 200 V
Drain-source breakdown voltage: 200V (min)
Gate-source breakdown voltage: ±20.0 V
Continuous drain current (Ids): 30.0 A
Rise time: 43 ns
Input capacitance (Ciss): 2159pF @25V(Vds)
Fall time: 33 ns
Working temperature (Max): 175 ℃
Working temperature (Min): -55 ℃
Dissipated power (Max): 214000 mW
Installation method: Through Hole
Number of pins: 3

Package include:
12 x IRFP250N IRFP250 250 n-channel MOSFET transistor

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