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Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs) in Saudi Arabia

Chanzon FGA25N120 TO-3P IGBT High-Speed Power Switching Transistor, for High-Speed Power Switching with Insulated Gate (Pack of 5pcs)

SAR 73
Brand
CHANZON
Weight
42 g
StyleFGA25N120
– 1 +

Special Features

  • Transistor Type: IGBT (Insulated Gate Bipolar Transistor), offering high-speed power switching capability.
  • Transistor Specification: Capable of handling Collector Emitter Voltage (VCES) up to 1200V, Dissipation Power (PD) up to 125W, and Collector Current (IC) of 25A at Collector Temperature (Tc) of 100°C.
  • Recovery Time: Features Reverse Recovery Time (trr) of 300 ns.
  • Application: Designed for efficient power management, commonly used in power supplies, and motor control systems.
  • Package: Comes in a TO-3P package, with each pack containing 5 units, ensuring ESD safety and long shelf life.

Description

Product Description:
This 1200V / 25A Trench Field Stop IGBT is designed for high-reliability applications. Key features include:
High breakdown voltage for enhanced durability.
Trench-Stop Technology for a tight parameter distribution and temperature stability.
Improved short circuit withstand time of 10μs and low VCE(SAT) for efficient operation.
Easy parallel switching capability due to a positive temperature coefficient in VCE(SAT).
Enhanced avalanche capability for robust performance.
Ideal for use in Frequency Converters and Motor Drives.
Technical Highlights:
Collector-Emitter Breakdown Voltage (VCE): 1200V
DC Collector Current (IC): Up to 50A at 25°C, 25A at 100°C
Gate-Emitter Voltage (VGE): Continuous - ±20V, Transient - ±30V
Operating Junction Temperature (Tj): -40°C to +150°C
Thermal Resistance (Rθ): Junction-case - 0.5 K/W for IGBT, 1 K/W for Diode
Electrical Characteristics (Tj= 25°C):
Static Collector-Emitter Breakdown Voltage (BVCES): 1200V
Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.65V at 25°C, 2.05V at 150°C
Gate-Emitter Leakage Current (IGES): ≤ 100nA
Transconductance (gfs): Approximately 20S
Input Capacitance (Cies): Typically 2340pF at 1MHz

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