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NTE Electronics NTE312 N-Channel Silicon Junction Field Effect Transistor, TO92 Type Package in Saudi Arabia

NTE Electronics NTE312 N-Channel Silicon Junction Field Effect Transistor, TO92 Type Package

SAR 14
Weight
2 g
– 1 +

Special Features

  • High Power Gain: 10dB Min at 400MHz.
  • High Trans conductance: 4000 mho Min at 400MHz. Weight :0.2600 Pounds
  • Drain and Gate Leads Separated for High Maximum Stable Gain
  • Cross−Modulation Minimized by Square−Law Transfer Characteristic
  • For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment

Description

The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO-92 package.

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