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ON Semiconductor/Fairchild 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 25) in Saudi Arabia ON Semiconductor/Fairchild 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 25) in Saudi Arabia ON Semiconductor/Fairchild 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 25) in Saudi Arabia ON Semiconductor/Fairchild 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 25) in Saudi Arabia

ON Semiconductor/Fairchild 2N4401 Bipolar (BJT) Single Transistor, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE (Pack of 25)

SAR 68
– 1 +

Special Features

  • 60V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient
  • 30ns Fall time (TA = 25°C)

Description

The 2N4401BU is a 40V NPN Bipolar (BJT) Single Transistor, designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications.

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