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2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors in Saudi Arabia 2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors in Saudi Arabia 2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors in Saudi Arabia 2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors in Saudi Arabia 2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors in Saudi Arabia

2 Pack NEC 2SA1232 A1232 Silicon PNP Bipolar Junction (BJT) Power Transistors

SAR 68

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Special Features

  • Package of 2 - Genuine NEC 2SA1232 (A1232) silicon PNP power transistors in TO-247 case
  • Rated for –130V VCE, –10A continuous (–15A peak) collector current
  • High power dissipation: 100W at TC = 25°C
  • DC gain (hFE) 60–320, transition frequency 60 MHz
  • Ideal for audio amplifiers, high-power amplification, and switching circuits

Description

This listing includes two original NEC 2SA1232 (A1232) silicon PNP power transistors in a TO-247 package. Designed for durability and high-performance applications, these transistors are widely used in audio frequency power amplifiers, high-power amplification, and switching circuits. The NEC 2SA1232 offers a collector-emitter voltage of –130V, continuous collector current of –10A (–15A peak), and power dissipation up to 100W at 25°C. With a DC current gain (hFE) range of 60–320 and a transition frequency of 60 MHz, it ensures efficient amplification and stable performance under demanding conditions. All components are brand new, original NEC parts, packaged in pairs for convenience and reliability.

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